An In-Depth Optimization of Thickness of Base and Emitter of ZnO/Si Heterojunction-Based Crystalline Silicon Solar Cell: A Simulation Method

The heterojunction (HJ) solar cell is one of the best possible options to upgrade conventional single homo-junction c-Si cell. In this work, a HJ based on crystalline silicon (c-Si) wafer with zinc oxide (ZnO) designed reduce loss power conversion owing reflection incident photons by top surface silicon. A PC1D simulation used evaluate optimum numerical value key photovoltaic parameters for HJ-based cells. average reflectance ZnO/Si 7.65% in wavelength range 400-1000 nm. highest efficiency (η = 24.8%) obtained 400 μm base thickness, 20 emitter doping concentration 1.1 × 1017 cm−3 and 5.1 x 1016 emitter. proposed high would be alternative device